r07ds1244ej0901 rev.9.01 page 1 of 6 jan 07, 2015 preliminary datasheet rjk0301dpb-02 30v, 60a, 2.8m ? max. silicon n channel power mos fet power switching features ? high speed switching ? capable of 4.5v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 2.3 m typ. (at v gs = 10 v) ? pb-free ? halogen-free outline renesas package code: ptzz0005da-a (package name: lfpak) g d sss 4 1 23 5 1, 2, 3 source 4 gate 5 drain 1 2 3 4 5 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss +16/ ?12 v drain current i d 60 a drain peak current i d(pulse) note1 240 a body-drain diode reverse drain current i dr 60 a avalanche current i ap note 2 30 a avalanche energy e ar note 2 90 mj channel dissipation pch note3 65 w channel to case thermal resistance ch-c 1.93 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tch = 25 c, rg 50 3. tc = 25 c r07ds1244ej0901 (previous: rej03g1338-0900) rev.9.01 jan 07, 2015
rjk0301dpb-02 preliminary r07ds1244ej0901 rev.9.01 page 2 of 6 jan 07, 2015 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = +16/?12 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.2 ? 2.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 2.3 2.8 m i d = 30 a, v gs = 10 v note4 r ds(on) ? 3.0 4.0 m i d = 30 a, v gs = 4.5 v note4 forward transfer admittance |y fs | ? 110 ? s i d = 30 a, v ds = 10 v note4 input capacitance ciss ? 5000 ? pf v ds = 10 v, v gs = 0, f = 1 mhz output capacitance coss ? 1450 ? pf reverse transfer capacitance crss ? 220 ? pf gate resistance rg ? 0.8 ? total gate charge qg ? 32 ? nc v dd = 10 v, v gs = 4.5 v, i d = 50 a gate to source charge qgs ? 14.5 ? nc gate to drain charge qgd ? 7.0 ? nc turn-on delay time t d(on) ? 11.5 ? ns v gs = 10 v, i d = 30 a, v dd ? 10 v,r l = 0.33 , rg = 4.7 rise time t r ? 4.5 ? ns turn-off delay time t d(off) ? 58 ? ns fall time t f ? 6.0 ? ns body?drain diode forward voltage v df ? 0.84 1.10 v if = 60 a, v gs = 0 note4 body?drain diode reverse recovery time t rr ? 50 ? ns if = 60 a, v gs = 0 di f / dt = 100 a/ s notes: 4. pulse test
rjk0301dpb-02 preliminary r07ds1244ej0901 rev.9.01 page 3 of 6 jan 07, 2015 main characteristics drain to source voltage v ds (v) drain current i d (a) typical output characteristics drain current i d (a) drain current i d (a) channel dissipation pch (w) case temperature tc (c) power vs. temperature derating gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (mv) drain to source saturation voltage vs. gate to source voltage gate to source voltage v gs (v) typical transfer characteristics drain to source voltage v ds (v) maximum safe operation area drain current i d (a) static drain to source on state resistance vs. drain current 100 80 60 40 20 0 246810 100 80 60 40 20 0 12 34 5 tc = 75 c 25c ?25c 80 60 40 20 0 50 100 150 200 v ds = 10 v pulse test v gs = 2.5 v pulse test 10 3 1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 pulse test i d = 20 a 10 a 100 30 v gs = 4.5 v 10 v 2.7 v 2.9 v 10 v 3.1 v 4.5 v pulse test 0.1 1 10 100 10 100 1000 1 0.1 dc operation 100 s pw = 10 ms 1 ms 10 s operation in this area is limited by r ds(on) tc = 25c 1 shot pulse 5 a drain to source on state resistance r ds (on) (m)
rjk0301dpb-02 preliminary r07ds1244ej0901 rev.9.01 page 4 of 6 jan 07, 2015 case temperature tc ( c) static drain to source on state resistance vs. temperature capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics 01 0 30 20 10000 3000 1000 300 100 30 10 v gs = 0 f = 1 mhz 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 0 crss coss ciss i d = 60 a v gs v ds v dd = 25 v 10 v v dd = 25 v 10 v 10 8 6 4 2 ?25 0 25 50 75 100 125 150 0 i d = 5 a, 10 a, 20 a v gs = 4.5 v 10 v pulse test 5 a, 10 a, 20 a static drain to source on state resistance r ds (on) (m) source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating 100 80 60 40 20 25 50 75 100 125 150 0 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 pulse test 5 v v gs = 0, ?5v 10 v i ap = 30 a v dd = 15 v duty < 0.1 % rg 50
rjk0301dpb-02 preliminary r07ds1244ej0901 rev.9.01 page 5 of 6 jan 07, 2015 d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform pulse width pw (s) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 1 m 10 m 100 m 1 10 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance s (t) 10 100 tc = 25c p dm pw t d = pw t ch ? c (t) = s (t) ? ch ? c ch ? c = 1.92c/w, tc = 25c vin monitor d.u.t. vin 10 v r l v ds = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
rjk0301dpb-02 preliminary r07ds1244ej0901 rev.9.01 page 6 of 6 jan 07, 2015 package dimensions 0.25 m 1.3 max 1.0 3.95 1.1 max 4.9 5.3 max 4.0 0.2 1 4 5 4.2 3.3 0 ? 8 0.07 +0.03 ?0.04 0.20 +0.05 ?0.03 0.6 +0.25 ?0.20 0.25 +0.05 ?0.03 6.1 +0.1 ?0.3 previous code ptzz0005da-a lfpakv mass[typ.] 0.080g sc-100 renesas code jeita package code 1.27 0.40 0.06 0.75 max 0.10 (ni/pd/au plating) unit: mm package name lfpak ordering information orderable part number quan tity shipping container rjk0301dpb-02#j0 2500 pcs taping note: the symbol of ?#? is oc casionally presented as ?-?.
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